Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT) | International Journal for Simulation and Multidisciplinary Design Optimization (IJSMDO)

Simulation and Optimization for Industry 4.0

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Table 1

Materials thermal properties.

Materials
Au	19300	310	137
SiN	3300	10	713
AlGaN	5470		548
GaN	6100		490
SiC	3220		690

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