Research Article

Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

¹ Normandie University, INSA Rouen, LMN, 76000 Rouen, France
² Hassan First University of Settat, FST, LIMII, BP: 577, Route de Casa, Settat, Morocco

^* e-mail: abdelhamid.amar@insa-rouen.fr

Received: 30 December 2020
Accepted: 27 October 2021

Abstract

The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled. This proposed modeling by the finite element method using the Comsol multiphysics software, allowed to study the multiphysics behaviour of the transistor and to observe the different degradations in the structure of the component. Then, an optimization study is necessary to avoid failures in the transistor. In this work, we have used the Covariance Matrix Adaptation-Evolution Strategy (CMA-ES) method to solve the optimization problem, but it requires a very important computing time. Therefore, we proposed the kriging assisted CMA-ES method (KA-CMA-ES), it is an integration of the kriging metamodel in the CMA-ES method, it allows us to solve the problem of optimization and overcome the constraint of calculation time. All these methods are well detailed in this paper. The coupling of the finite element model developed on Comsol Multiphysics and the KA-CMA-ES method on Matlab software, allowed to optimize the multiphysics behaviour of the transistors. We made a comparison between the results of the numerical simulations of the initial state and the optimal state of the component. It was found that the proposed KA-CMA-ES method is efficient in solving optimization problems.