Research article

Multi-objective optimization of the high electron mobility transistor

¹ Centre de Recherche, IRDL CNRS UMR 6027, Université de Bretagne Sud, Lorient, France
² Laboratory of Computer and Mathematical Process Engineering, ENSA Khouribga, Sultan Moulay Slimane University, Morocco
³ Hassan First University of Settat, FST, LIMII, BP: 577, Route de Casa, Settat, Morocco
⁴ Normandie University, INSA Rouen, LMN, 76000 Rouen, France

^* email: amarabdelhamid20@gmail.com

Received: 6 March 2023
Accepted: 6 July 2023

Abstract

In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems. The first one is the optimization of the thermal behavior of the HEMT, through the optimization of its maximum operating temperature which influences the electrical characteristics such as electron mobility, and also influences the mechanical behavior of its structure. While the second problem will be the optimization of the mechanical behavior of the same technology, through the optimization of the stresses distribution that also influence the electrical characteristics and reliability of the HEMT structure. The resolution of these two optimization problems will be done, by the multi-objective optimization approach thanks to numerical tools such as Comsol multiphysics and Matlab software, which allows to solve these two problems simultaneously by taking into consideration the imposed constraints. The results obtained have optimized the thermo-mechanical behavior of the HEMT, which proves the efficiency of this approach to solve complex optimization problems.