Int. J. Simul. Multidisci. Des. Optim.
Volume 4, Number 1, January 2010
|Page(s)||49 - 55|
|Published online||21 July 2011|
Screening study on high power IGBT
Université de Toulouse, INPT, ENIT, LGP, 47 avenue Azereix, BP1629, Tarbes, France
Corresponding author: firstname.lastname@example.org
Accepted: 15 February 2010
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of investigation is related with the number of factors. It is important before modelling to measure the effect of factors and interactions to suppress no significant factors and consequently, reduce the size of the DOE. In this paper we identify the significant elements among four factors related to converter design (Lcom, Lge) and driver (ton, Rgoff). Screening study on this factors show that only Lcom, Rgoff and to determine overvoltage and only Rgoff and ton determine communication speed. Significant interactions are also identified. Lots of articles discuss about high power IGBT. This one gets onto IGBT behaviour with an experimental way.
Key words: IGBT / screening / bipolar technology
© ASMDO, 2010
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