Screening study on high power IGBT

Université de Toulouse, INPT, ENIT, LGP, 47 avenue Azereix, BP1629, Tarbes, France

Corresponding author: moussa.karama@enit.fr

Received: 10 December 2009
Accepted: 15 February 2010

Abstract

This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of investigation is related with the number of factors. It is important before modelling to measure the effect of factors and interactions to suppress no significant factors and consequently, reduce the size of the DOE. In this paper we identify the significant elements among four factors related to converter design (L_com, L_ge) and driver (t_on, R_goff). Screening study on this factors show that only L_com, R_goff and to determine overvoltage and only R_goff and t_on determine communication speed. Significant interactions are also identified. Lots of articles discuss about high power IGBT. This one gets onto IGBT behaviour with an experimental way.